PLENARY & INVITED SPEAKERS

Devendra Sadana (IBM, USA)
"CMOS Scaling Beyond 22 nm: Issues and Challenges"
Katsuhiro Tsukamoto (Renesas, Japan)
"Evolution of Ion Implantation Technology and Its Contribution to Semiconductor Industry"
Isao Yamada (Kyoto Univ., Japan)
"Japan's contributions to ion beam technologies"

Edward Bielejec (Sandia National Laboratories, USA)
"Single Ion Implanted Donor Devices for Quantum Information Processing "
Paul Chu (Hong Kong Univ.)
"Enhancement of Surface Bioactivity and Biocompatibility of Materials Using Plasma, Energetic Ions, and Related Techniques"
Ray Duffy (Tyndall National Institute, Ireland)
"FinFET doping ; material science, metrology, and process modelling studies, for optimised device performance"
Pier Francesco Fazzini (Centre National de la Recherche Scientifique, France)
"Extended defects evolution in ion implanted SiGe alloys and Germanium"
Amitabh Jain (Texas Instruments, USA)
"Advancement of CMOS Doping Technology in an External Development Framework"
Jaesun Jeon (Samsung, Korea)
"Ion Implantation Requirements for Future DRAM Production"
Yoji Kawasaki (Renesas, Japan)
"The Application of Cluster Boron Implantation to pMOSFETs"
Tsunenobu Kimoto (Kyoto Univ., Japan)
"Ion Implantation Technology for Advanced SiC Power Devices"
Charles W. Magee (Evans Analytical Group, USA)
"Secondary Ion Mass Spectrometry and Ion Implantation: A 40-Year Marriage of Necessity"
Tadakuni Narabu (Sony, Japan)
"The current situation of the image sensor advancing the performance of cameras"
Lourdes Pelaz (University of Valladolid, Spain)
"Modeling of defect generation and dissolution in ion implanted semiconductors"
Kyoichi Suguro (Toshiba, Japan)
"Doping Technology for the Improvement of Next Generation Device Performance."